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Journal of Applied Physics

Volumn 105, Issue 5, 2009, Pages

Vacuum-ultraviolet-induced charge depletion in plasma-charged patterned-dielectric wafers

(3) Upadhyaya, G S a Kruger, J B b Shohet, J L a

a Wisconsin Electric Machines and Power Electronics Consortium (United States)

b STANFORD UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; DIELECTRIC MATERIALS; ELECTRIC CONDUCTIVITY; PHOTONS; PLASMAS; PRESSURE DROP; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; VACUUM;

CHARGE DEPLETIONS; DEVICE FABRICATIONS; DIELECTRIC STRUCTURES; DIELECTRIC WAFERS; ELECTRICAL DAMAGES; EQUIVALENT-CIRCUIT MODELS; FLUX DENSITIES; HOLE STRUCTURES; INDUCED CHARGES; OXIDE DIELECTRICS; OXIDE SURFACES; PHOTOINJECTION; PHOTON ENERGIES; PLASMA-INDUCED; SURFACE-POTENTIAL MEASUREMENTS; VACUUM ULTRA VIOLETS;

ELECTROMAGNETIC INDUCTION;

EID: 62549165416 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3088889 Document Type: Article

Times cited : (8)

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