Fabrication and field emission properties of boron nanowire bundles

Ultramicroscopy

Volumn 109, Issue 5, 2009, Pages 447-450

  Liu, Fei ^a   Liang, W J ^a   Su, Z J ^a   Xia, J X ^a   Deng, S Z ^a   Chen, J ^a   She, J C ^a   Xu, N S ^a   Tian, J F ^b   Shen, C M ^b   Gao, H J ^b  

^a State Key Laboratory of Optoelectronic Materials and Technologies   (China)

^b INSTITUTE OF PHYSICS   (China)

Author keywords

BNBs; Chemical vapor deposition; FE

Indexed keywords

BNBS; CERAMIC SUBSTRATES; CHEMICAL VAPOR DEPOSITION METHODS; FE; FIELD EMISSION PROPERTIES; LARGE-SCALE CRYSTALLINE; MEAN DIAMETERS; REACTION PROCESS; SURFACE ELECTRONS; TETRAGONAL STRUCTURES; THRESHOLD FIELDS; TURN-ON FIELDS;

BORON; BORON COMPOUNDS; CHEMICAL VAPOR DEPOSITION; CRYSTAL ORIENTATION; ELECTRIC WIRE; ELECTRON AFFINITY; FIELD EMISSION; SINGLE CRYSTALS; THICKNESS MEASUREMENT; VAPORS;

NANOWIRES;

BORON; FERRIC OXIDE; NANOCRYSTAL; NANOWIRE;

ARTICLE; CHEMICAL VAPOR DEPOSITION; CRYSTAL STRUCTURE; FIELD EMISSION; NANOCATALYSIS; NANOCATALYST; NANOFABRICATION; SCANNING ELECTRON MICROSCOPY; SURFACE PROPERTY; TRANSMISSION ELECTRON MICROSCOPY;

EID: 62549153557     PISSN: 03043991     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ultramic.2008.12.010     Document Type: Article

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