Nonmetallic inclusions in solar cell silicon: Focusing on recycling of scraps

Proceedings of the 2008 Global Symposium on Recycling, Waste Treatment and Clean Technology, REWAS 2008

Volumn , Issue , 2008, Pages 1011-1026

  Zhang, Lifeng ^a   Øvrelid, Eivind ^b   Senanu, Samuel ^c   Agyei Tuffour, Benjamin ^c   Femi, Adegboyega Nathaniel ^d  

^a University of Missouri Rolla   (United States)

^b SINTEF   (Norway)

^c NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Norway)

^d UNIVERSITY OF NORTHERN IOWA   (United States)

Author keywords

Foam filters; Inclusions; Silicon carbide; Silicon nitride; Solar cell silicon; Vacuum filtration

Indexed keywords

INCLUSIONS; INDUSTRIAL WASTE TREATMENT; INGOTS; NONMETALS; PHOTOVOLTAIC CELLS; POROUS MATERIALS; RECYCLING; SCRAP METAL REPROCESSING; SILICON; SILICON CARBIDE; SILICON NITRIDE; SILICON WAFERS; SOLAR CELLS; VACUUM;

CAKE FILTRATIONS; CUT OFFS; DEEP-BED FILTRATIONS; DIRECTIONAL SOLIDIFICATIONS; FOAM FILTERS; HARD INCLUSIONS; MATERIAL LOSS; NEEDLE LIKES; NON-METALLIC INCLUSIONS; SILICON INGOTS; SOLAR CELL SILICON; SOLAR GRADE SILICONS; SURFACE OBSERVATIONS; VACUUM FILTRATION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 62449138147     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (40)

1. B. G. Gribov and K. V. Zinov'ev: Inorganic Materials, (2007), 39(7), 653.
2. C. P. Khattak, F. Schmid, D. B. Joyce, E. A. Smelik and M. A. Wilkinson: Production of solar-grade silicon by refining of liquid metallurgical-grade silicon, ed., AIP Conference Proceedings, eds., (1999), 731-736.
3. Internet: http://www.rise.org.au/info/Tech/pv/, (2006),
4. M. A. Green, in Solar cells. Operating principles, technology, and systems applications, eds., Prentice-Hall, Englewood Cliffs, New York, (1982),
5. P. Hersch and K. Zweibel: Department of Energy, Report No., (1982).
6. C. Arjan, L. Zhang and T. A. Engh, in TMS 2007 ANNUAL MEETING & EXHIBITION: Recycling and Waste Processing: Materials Recovery from Wastes, Batteries and Co/Ni; Precious Metals Recovery; and Other NonFessrous, M. Schlesinger, R.L. Stephens and D.L. Stewart, eds., FEBRUARY 25-MARCH 1, ORLANDO, FLORIDA, (2007), 67-76.
7. D. Sarti and R. Einhaus: Solar Energy Materials & Solar cells, (2002), 72, 27.
8. A. K. Soiland, E. J. Ovrelid, T. A. Engh, O. Lohne, J. K. Tuset and O. Gjerstad: Materials in Semiconductor Processing, (2004), 7, 39.
9. H. M. Jennings: Journal of Materials Science, (1983), 18(4), 951.
10. H. M. Jennings, B. J. Dalgleish and P. L. Pratt: Journal of Materials Science, (1988), 23(7), 2573.
11. H. M. Jennings: Journal of Materials Research, (1988), 3(5), 907.
12. J. J. Thomas, H. M. Jennings and D. L. Johnson: Journal of Materials Research, (1993), 287, 277.
13. H. M. Jennings and M. H. Richman: Journal of Materials Science, (1976), 11(11), 2087.
14. B. J. Dalgleish, H. M. Jennings and P. L. Pratt: Proceedings of the British Ceramic Society, (1981), (31), 85.
15. W. Kaiser and C. D. Thurmond: Journal of Applied Physics, (1959), 30(3), 427.
16. J. Mukerji and S. K. Biswas: Journal of the American Ceramic Society, (1981), 64(9), 549.
17. A. K. Soiland: Thesis, Norwegian University of Science and Technology, (2004).
18. Y. Iguchi and T. Narushima: First International Conference on Processing Materials for Properties, (1993), 437.
19. Y. Yatsurugi, N. Akiyama, Y. Endo and T. Nozaki: Journal of the Electrochemical Society, (1973), 120(7), 975.
20. K. Blegen: Thesis, Norwegian University of Science and Technology, (1976).
21. G. H. Schwuttke, T. F. Ciszek, H. H. Yang and A. Kran: IBM Journal of Research and Development, (1978), 22(4), 335.
22. T. F. Ciszek, G. H. Schwuttke and K. H. Yang: IBM Journal of Research and Development, (1979), 23(3), 270.
23. T. F. Ciszek, G. H. Schwuttke and K. H. Yang: Journal of Crystal Growth, (1979), 46(4), 527.
24. T. F. Ciszek, G. H. Schwuttke and K. H. Yang: Journal of Crystal Growth, (1980), 50(1), 160.
25. E. Ovrelid, B. Geeriligs, A. Warnes and O. Raness: International conference of Silicon for the Chemical Industry VIII, (2006).
26. K. Yanaba, M. Akasaka, M. Takeuchi, M. Watanabe, T. Narushima and Y. Iguchi: Materials Transactions, JIM, (1997), 38(11), 990.
27. L. Oden and R. A. McCune: Metallurgical Transactions A (Physical Metallurgy and Materials Science), (1987), 18A(12), 2005.
28. A. R. Bean and R. C. Newman: Journal of the Physics and Chemistry of Solids, (1971), 32(6), 1211.
29. R. N. Hall: Journal of Applied Physics, (2007), 29(6), 914.
30. O. Lohne: Report No., (1993).
31. R. I. Scace and G. A. Slack: Journal of Chemical Physics, (1959), 30(6), 1551.
32. F. Durand and J. C. Duby: Journal of Phase Equilibria, (1999), 20(1), 61.
33. T. Nozaki, Y. Yatsurugi and N. Akiyama: Journal of the Electrochemical Society, (1970), 117(12), 1566.
34. Y. Endo, Y. Yatsurugi, Y. Terai and T. Nozaki: Journal of the Electrochemical Society, (1979), 126(8), 1422.
35. K. Yanaba, Y. Matsumura, T. Narushima and Y. Iguchi: Materials Transactions, JIM, (1998), 39(8), 819.
36. S. Fischler: Journal of Applied Physics, (1962), 33(4), 1615.
37. R. Jaccodine and C. Pearce, in Proceedings of Symposium on Defects in Silicon, L.C.K. W. M. Bullis, eds., The Electrochemical Society, Pennington NJ, USA, (1983), 115-119.
38. S. Kobayashi, in Properties of Crystalline Silicon, R. Hull, eds., Institution of Electrical Engineers, (2000), 16-22.
39. S. J. Pearton, in Properties of Crystalline Silicon, R. Hull, eds., Institution of Electrical Engineers, (2000), 503-505.
40. B. Pajot, in Properties of Crystalline Silicon, R. Hull, eds., Institution of Electrical Engineers, (2000), 488-491.