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Volumn , Issue 40, 2008, Pages 4983-4985

Low-temperature water gas shift reaction on Cu/SiO2 prepared by an atomic layer epitaxy technique (Chemical Communications (2008) (4983-4985) DOI: 10.1039/b807428c);Low-temperature water gas shift reaction on Cu/SiO2 prepared by an atomic layer epitaxy technique

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EID: 62249147024     PISSN: 13597345     EISSN: None     Source Type: Journal    
DOI: 10.1039/b807428c     Document Type: Erratum
Times cited : (28)

References (18)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.