Effects of ultraviolet irradiation on conductivity of pentacene and contact resistivity of Au/pentacene

Japanese Journal of Applied Physics

Volumn 47, Issue 10 PART 1, 2008, Pages 7851-7853

  Lin, Yow Jon ^a   Yang, Fu Ming ^a   Chou, Wei Yang ^b   Chang, Jay ^b  

^a NATIONAL CHANGHUA UNIVERSITY OF EDUCATION   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

Contact resistance; Ohmic contact; Organic semiconductor; Photoelectron spectroscopy; Surface treatment

Indexed keywords

CONTACT RESISTANCE; ELECTRIC CONDUCTIVITY; ELECTRIC CONTACTORS; IRRADIATION; OHMIC CONTACTS; OXYGEN; PHOTOELECTRICITY; PHOTOELECTRON SPECTROSCOPY; PHOTOIONIZATION; PHOTONS; SPECTRUM ANALYSIS; SURFACE TREATMENT;

AU ELECTRODES; C-H BONDS; CONTACT RESISTIVITIES; ELECTRICAL CONDUCTIVITY MEASUREMENTS; ELECTRICAL PROPERTIES; ORGANIC SEMICONDUCTOR; PENTACENE; PENTACENE LAYERS; SPECTROSCOPIC METHODS; TRANSFER LENGTH METHODS; ULTRAVIOLET IRRADIATIONS; UV IRRADIATIONS;

SEMICONDUCTING ORGANIC COMPOUNDS;

EID: 62249140182     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.7851     Document Type: Article

References (23)

1. Y. Y. Lin, D. I. Gundlach, S. F. Nelson, and T. N. Jackson: IEEE Trans. Electron Devices 44 (1997) 1325.
2. M. Daraktchiev, A. von Mhlenen, F. Nesch, M. Schaer, M. Brinkmann, M.-N. Bussac, and L. Zuppiroli: New J. Phys. 7 (2005) 133.
3. J. Lee, D. K. Hwang, C. H. Park, S. S. Kim, and S. Im: Thin Solid Films 451-452 (2004) 12.
4. M. H. Choo, W. S. Hong, and S. Im: Thin Solid Films 420-421 (2002) 492.
5. D. Knipp and R. A. Street: J. Non-Cryst. Solids 338-340 (2004) 595.
6. C. Voz, J. Puigdollers, I. Martin, D. Mun̈oz, A. Orpella, M. Vetter, and R. Alcubilla: Sol. Energy Mater. Sol. Cells 87 (2005) 567.
7. S. D. Wang, T. Minari, T. Miyadera, K. Tsukagoshi, and Y. Aoyagi: Appl. Phys. Lett. 91 (2007) 203508.
8. P. Parisse, M. Passacantando, and L. Ottaviano: Appl. Surf. Sci. 252 (2006) 7469.
9. J.-M. Choi, D. K. Hwang, J. M. Hwang, J. H. Kim, and S. Im: Appl. Phys. Lett. 90 (2007) 113515.
10. W. K. Kim and J. L. Lee: Appl. Phys. Lett. 88 (2006) 262102.
11. D.-J. Yun, D.-K. Lee, H.-K. Jeon, and S.-W. Rhee: Org. Electron. 8 (2007) 690.
12. L. Diao and C. D. Frisbie: J. Appl. Phys. 101 (2007) 014510.
13. L. Giraudet, S. Fauveaux, O. Simonetti, C. Petit, K. Blary, T. Maurel, and A. Belkhir: Synth. Met. 156 (2006) 838.
14. D. K. Schroder: Semiconductor Material and Device Characterization (Wiley, New York, 1998) 2nd ed.
15. S. P. Park, S. S. Kim, J. H. Kim, C. N. Whang, and S. Im: Appl. Phys. Lett. 80 (2002) 2872.
16. S. J. Kang, Y. Yi, C. Y. Kim, K. H. Yoo, A. Moewes, M. H. Cho, J. D. Denlinger, C. N. Whang, and G. S. Chang: Phys. Rev. B 72 (2005) 205328.
17. A. Vollmer, O. D. Jurchescu, I. Arfaoui, I. Salzmann, T. T. M. Palstra, P. Rudolf, J. Niemax, J. Pfiaum, J. P. Rabe, and N. Koch: Eur. Phys. J. E 17 (2005) 339.
18. V. Nádaždy, R. Durný, J. Puigdollers, C. Voz, S. Cheylan, and K. Gmucova: Appl. Phys. Lett. 90 (2007) 092112.
19. K. H. Lee, H. W. Jang, K. B. Kim, Y. H. Tak, and J. L. Lee: J. Appl. Phys. 95 (2004) 586.
20. H. Estrade-Szwarckopf, B. Rousseau, C. Herold, and P. Lagrange: Mol. Cryst. Liq. Cryst. 310 (1998) 231.
21. B. Fang, H. Zhou, and I. Honma: Appl. Phys. Lett. 86 (2005) 261909.
22. S. Ogawa, T. Naijo, Y. Kimura, H. Ishii, and M. Niwano: Appl. Phys. Lett. 86 (2005) 252104.
23. D. Knipp, T. Muck, A. Benor, and V. Wagner: J. Non-Cryst. Solids 352 (2006) 1774.