Correlation between electron spin relaxation time and hetero-interface roughness in (1 1 0)-oriented GaAs/AlGaAs multiple-quantum wells

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 41, Issue 5, 2009, Pages 870-875

  Iba, Satoshi ^a   Fujino, Hiroshi ^a   Fujimoto, Toshiyasu ^a   Koh, Shinji ^a   Kawaguchi, Hitoshi ^a  

^a NARA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

(1 1 0) quantum wells; Growth interruption; Hetero interface; Spin relaxation

Indexed keywords

CRYSTAL GROWTH; ELECTRONS; MOLECULAR BEAMS; MOLECULAR DYNAMICS; RELAXATION PROCESSES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WIRES; SPIN DYNAMICS; WELLS;

(1 1 0) QUANTUM WELLS; D'YAKONOV-PEREL; ELECTRON-SPIN RELAXATIONS; FULL WIDTH AT HALF-MAXIMUM; GAAS/ALGAAS; GROWTH INTERRUPTION; HETERO-INTERFACE; INTERFACE ROUGHNESS; INVERSION ASYMMETRIES; MULTIPLE-QUANTUM WELLS; PL SPECTRUM; SMOOTH INTERFACES; SPIN RELAXATION; TEMPERATURE DEPENDENCES; TIME-RESOLVED PL MEASUREMENTS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 61649128184     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2009.01.009     Document Type: Article

References (15)

1. Karimov O.Z., John G.H., Harley R.T., Lau W.H., Flatté M.E., Henini M., and Airey R. Phys. Rev. Lett. 91 (2003) 246601
2. Couto O.D.D., Iikawa Jr. F., Rudolph J., Hey R., and Santos P.V. Phys. Rev. Lett. 98 (2007) 036603
3. Hey R., Jahn U., Wan Q., and Trampert A. Phys. Status Solidi C 5 (2008) 2917
4. Ohno Y., Terauchi R., Adachi T., Matsukura F., and Ohno H. Phys. Rev. Lett. 83 (1999) 4196
5. D'yakonov M.I., and Perel' V.I. Sov. Phys. JETP 33 (1971) 1053
6. D'yakonov M.I., and Yu. Kachorovski V. Sov. Phys. Semicond. 20 (1986) 110
7. Schreiber L., Duda D., Beschoten B., Güntherodt G., Schönherr H.-P., and Herfort J. Phys. Status Solidi B 244 (2007) 2960
8. Lau W.H., and Flatté M.E. J. Appl. Phys. 91 (2002) 8682
9. Liu L.S., et al. J. Cryst. Growth 301 (2007) 93
10. Neave J.H., Zhang J., Zhang X.M., Fawcett P.N., and Joyce B.A. Appl. Phys. Lett. 62 (1993) 753
11. Tok E.S., Jones T.S., Neave J.H., Zhang J., and Joyce B.A. Appl. Phys. Lett. 71 (1997) 3278
12. Kajikawa Y. Phys. Rev. B 51 (1995) 16790
13. Tanaka M., Sakaki H., and Yoshino J. Jpn. J. Appl. Phys. 25 (1986) 155
14. Seymour R.J., and Alfano R.R. Appl. Phys. Lett. 37 (1980) 231
15. Hillmer H., Forchel A., Sauer R., and Tu C.W. Phys. Rev. B 42 (1990) 3220