Development of an epitaxial lift-off technology for II-VI nanostructures using ZnMgSSe alloys

Microelectronics Journal

Volumn 40, Issue 3, 2009, Pages 530-532

  Moug, R ^a   Bradford, C ^a   Curran, A ^a   Izdebski, F ^a   Davidson, I ^a   Prior, K A ^a   Warburton, R J ^a  

^a HERIOT WATT UNIVERSITY   (United Kingdom)

Author keywords

Epitaxial lift off; Quantum wells; ZnMgSSe; ZnSe

Indexed keywords

CERIUM ALLOYS; CRYSTALS; ENERGY GAP; GALLIUM ALLOYS; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING SELENIUM COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR QUANTUM WIRES; WELLS; ZINC; ZINC ALLOYS;

EMISSION WAVELENGTHS; EPITAXIAL LIFT-OFF; EPITAXIAL LIFT-OFF TECHNIQUES; ETCHING PROCESS; GAAS SUBSTRATES; HETEROSTRUCTURES; LATTICE-MATCHED; PHOTOLUMINESCENCE INTENSITIES; QUANTUM WELLS; RELEASE LAYERS; SACRIFICIAL LAYERS; STRAIN STATE; WIDE BAND GAPS; ZNMGSSE; ZNSE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 61549115955     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2008.06.024     Document Type: Article

References (11)

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