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Journal of Applied Physics

Volumn 105, Issue 4, 2009, Pages

The Hartman effect in graphene

(5) Wu, Zhenhua a Chang, Kai a Liu, J T b Li, X J c Chan, K S d

a INSTITUTE OF SEMICONDUCTORS (China)

b NANCHANG UNIVERSITY (China)

c FUJIAN NORMAL UNIVERSITY (China)

d CITY UNIVERSITY OF HONG KONG (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CRITICAL VALUES; DOUBLE BARRIERS; GRAPHENE; GRAPHENE LAYERS; HARTMAN EFFECTS; INCIDENT ANGLES; NORMAL INCIDENCES; NUMERICAL RESULTS; QUANTUM-TUNNELING; TUNNELING PROCESS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 61449248278 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3078079 Document Type: Article

Times cited : (54)

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