Dielectric and mechanical properties of porous Si3N4 ceramics prepared via low temperature sintering

Ceramics International

Volumn 35, Issue 4, 2009, Pages 1699-1703

  Xia, Yongfeng ^a,b   Zeng, Yu Ping ^a   Jiang, Dongliang ^a  

^a SHANGHAI INSTITUTE OF CERAMICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

Borophosphosilicate; Dielectric constant; Low temperature sintering; Porous Si3N4 ceramics

Indexed keywords

BENDING STRENGTH; CERAMIC CAPACITORS; CERAMIC MATERIALS; DIELECTRIC WAVEGUIDES; MECHANICAL PROPERTIES; PERMITTIVITY; SILICON NITRIDE; SINTERING;

BOROPHOSPHOSILICATE; DIELECTRIC CONSTANT; FLEXURAL STRENGTHS; HIGH FLEXURAL STRENGTHS; LOW DIELECTRIC CONSTANTS; LOW TEMPERATURE SINTERING; POROUS SI3N4 CERAMICS; POROUS SILICON NITRIDES; SINTERING TEMPERATURES;

POROUS SILICON;

EID: 61449112864     PISSN: 02728842     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ceramint.2008.09.010     Document Type: Article

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