Aging effect in paraelectric state of ferroelectrics: Implication for a microscopic explanation of ferroelectric deaging

Applied Physics Letters

Volumn 94, Issue 8, 2009, Pages

  Xue, Dezhen ^a,b   Gao, Jinghui ^a   Zhang, Lixue ^a   Bao, Huixin ^a,b   Liu, Wenfeng ^a,b   Zhou, Chao ^a,b   Ren, Xiaobing ^a,b  

^a XI'AN JIAOTONG UNIVERSITY   (China)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; BARIUM; DIELECTRIC LOSSES; FERROELECTRICITY; MANGANESE; MANGANESE COMPOUNDS; OXYGEN; OXYGEN VACANCIES; POINT DEFECTS; REAL TIME SYSTEMS;

AGING EFFECTS; DEAGING; DIELECTRIC PERMITTIVITIES; DOPED SAMPLES; FERROELECTRIC STATE; FERROELECTRIC TRANSITIONS; MICROSCOPIC MECHANISMS; MN-DOPED; PARAELECTRIC; PARAELECTRIC STATE; RELAXATION FUNCTIONS; SHORT-RANGE ORDERINGS; TIME-DEPENDENT CHANGES;

FERROELECTRIC MATERIALS;

EID: 61349149870     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3086876     Document Type: Article

References (23)

1. K. Uchino, Ferroelectric Device (Dekker, New York, 2000).
2. W. A. Schulze and K. Ogino, Ferroelectrics FEROA8 0015-0193 10.1080/00150198808201399 87, 361 (1988).
3. U. Robels and G. Arlt, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.352948 73, 3454 (1993).
4. G. Arlt and H. Neumann, Ferroelectrics 87, 109 (1988). 0015-0193
5. L. X. Zhang and X. Ren, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.73.094121 73, 094121 (2006).
6. X. Ren, Nature Mater. NMAACR 1476-1122 10.1038/nmat1051 3, 91 (2004).
7. L. X. Zhang and X. Ren, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.71.174108 71, 174108 (2005).
8. M. C. McQuarrie and W. R. Buessem, Am. Ceram. Soc. Bull. 34, 402 (1955). 0002-7812
9. W. A. Schulze and J. V. Biggers, Ferroelectrics 9, 203 (1975). 0015-0193
10. M. M. Ahmad, K. Yamada, P. Meuffels, and R. Waser, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2713178 90, 112902 (2007).
11. D. Lin, K. W. Kwok, and H. L. W. Chan, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2746087 90, 232903 (2007).
12. Y. A. Genenko and D. C. Lupascu, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.75.184107 75, 184107 (2007).
13. A. A. Kirianov, N. Ozaki, H. Ohsato, N. Kohzu,:and H. Kishi, Jpn. J. Appl. Phys., Part 1 JAPNDE 0021-4922 10.1143/JJAP.40.5619 40, 5619 (2001).
14. F. Jona and G. Shirane, Ferroelectric Crystals (MacMillan, New York, 1962).
15. S. H. Cha and Y. H. Han, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.2386924 100, 104102 (2006).
16. O. Bidault, P. Goux, M. Kchikech, M. Belkaoumi, and M. Maglione, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.49.7868 49, 7868 (1994).
17. X. Ren and K. Otsuka, Nature (London) NATUAS 0028-0836 10.1038/39277 389, 579 (1997).
18. X. Ren and K. Otsuka, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.85.1016 85, 1016 (2000).
19. K. A. Müller, W. Berlinger, and J. Albers, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.32.5837 32, 5837 (1985).
20. R. -A. Eichel, P. Erhart, P. Traskelin, K. Albe, H. Kungl, and M. J. Hoffmann, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.100.095504 100, 095504 (2008).
21. C. Ang and Z. Yu, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.69. 174109 69, 174109 (2004).
22. G. Rupprecht, R. O. Bell, and B. D. Silverman, Phys. Rev. PHRVAO 0031-899X 10.1103/PhysRev.123.97 123, 97 (1961).
23. G. Burns and F. H. Dacol, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.28.2527 28, 2527 (1983).