Study of Al thermal diffusion in ZnTe using secondary ion mass spectroscopy

Physica Status Solidi (B) Basic Research

Volumn 244, Issue 5, 2007, Pages 1685-1690

  Tanaka, Tooru ^a   Murata, Norihiro ^a   Saito, Katsuhiko ^a   Nishio, Mitsuhiro ^a   Guo, Qixin ^a   Ogawa, Hiroshi ^a  

^a SAGA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 34249018818     PISSN: 03701972     EISSN: 15213951     Source Type: Journal    
DOI: 10.1002/pssb.200675133     Document Type: Article

References (8)

1. K. Sato, T. Ashahi, M. Hanafusa, A. Noda, A. Arakawa, M. Uchida, O. Oda, Y. Yamada, and T. Taguchi, phys. stat. sol. (a) 180, 267 (2000).
2. T. Tanaka, Y. Kume, M. Nishio, Q. Guo, H. Ogawa, and A. Yoshida, Jpn. J. Appl. Phys. 42, L362 (2003).
3. T. Tanaka, Y. Matsuno, Y. Kume, M. Nishio, Q. Guo, and H. Ogawa, phys. stat. sol. (c) 1, 1026 (2004).
4. T. Tanaka, K. Hayashida, K. Saito, M. Nishio, Q. Guo, and H. Ogawa, phys. stat. sol. (b) 243, 959 (2006).
5. M. Hanafusa, K. Sato, A. Noda, A. Arakawa, Y. Matsuda, and O. Oda, J. Appl. Phys. 89, 1989 (2001).
6. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981), p. 67.
7. C. Matano, Jpn. J. Phys. 8, 109 (1933).
8. Y. Namikawa, S. Fujiwara, and T. Kotani, J. Cryst. Growth 229, 92 (2001).