The impact of substrate bias on RTS and flicker noise in MOSFETs operating under switched gate bias

International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

Volumn , Issue , 2008, Pages 80-83

  Zanolla, Nicola ^a,b   Siprak, Domagoj ^b   Tiebout, Marc ^c   Baumgartner, Peter ^b   Sangiorgi, Enrico ^a   Fiegna, Claudio ^a  

^a UNIVERSITY OF BOLOGNA   (Italy)

^b Infneon Technologies AG   (Germany)

^c INFINEON TECHNOLOGIES AUSTRIA AG   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

BACK BIAS; BIAS POINTS; CAPTURE TIME; DE-TRAPPING; EMISSION TIME; FLICKER NOISE; GATE BIAS; LOW-FREQUENCY NOISE; MOSFETS; RANDOM TELEGRAPH SIGNALS; SUBSTRATE BIAS;

INTEGRATED CIRCUITS; MOSFET DEVICES; SPURIOUS SIGNAL NOISE; TELEGRAPH;

SUBSTRATES;

EID: 60749132283     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICSICT.2008.4734476     Document Type: Conference Paper

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