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Journal of Electroceramics

Volumn 22, Issue 1-3, 2009, Pages 73-77

Electrical and optical properties of metal-insulator-transition VO 2 thin films

(4) Lappalainen, J a Heinilehto, S a Jantunen, H a Lantto, V a

a UNIVERSITY OF OULU (Finland)

Author keywords

Conductivity mechanisms; Metal insulator transition; Optical properties; VO2

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRODEPOSITION; EPITAXIAL FILMS; HEATING; HYSTERESIS; JOULE HEATING; METAL INSULATOR BOUNDARIES; MICROSTRUCTURE; OPTICAL CONDUCTIVITY; OPTICAL PROPERTIES; OXYGEN; PULSED LASER DEPOSITION; TRANSITION METALS; VANADIUM;

CONDUCTIVITY MECHANISMS; ELECTRICAL AND OPTICAL PROPERTIES; IN-SITU; METAL STATE; MGO(1 0 0); MICROSTRUCTURE PROPERTIES; OPTICAL TRANSMITTANCES; OXYGEN PARTIAL PRESSURES; OXYGEN PRESSURES; POLY-CRYSTALLINE; POLYCRYSTALLINE FILMS; POLYCRYSTALLINE MICROSTRUCTURES; PULSED-LASER DEPOSITION TECHNIQUES; SWITCHING EFFECTS; TRANSITION PROCESS; TRANSITION TEMPERATURES; VANADIUM DIOXIDE THIN FILMS; VO2; XRD;

METAL INSULATOR TRANSITION;

EID: 60649095361 PISSN: 13853449 EISSN: 15738663 Source Type: Journal
DOI: 10.1007/s10832-008-9433-2 Document Type: Article

Times cited : (38)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.