Effect of temperature on the binding energy of excited states in a ridge quantum wire

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 41, Issue 4, 2009, Pages 543-547

  Khordad, R ^a  

^a YASOUJ UNIVERSITY   (Iran)

Author keywords

Binding energy; Impurity; Quantum wires; Temperature; V groove

Indexed keywords

ATOMS; BINDING SITES; EXCITED STATES; GALLIUM; INDIUM COMPOUNDS; NANOWIRES; NUCLEAR ENERGY; POTENTIAL ENERGY; QUANTUM ELECTRONICS; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES; WIRE;

DONOR IMPURITIES; EFFECT OF TEMPERATURES; EFFECTIVE MASS APPROXIMATIONS; GAAS / GA; HYDROGENIC DONOR IMPURITIES; IMPURITY; QUANTUM WIRES; TEMPERATURE; V-GROOVE;

BINDING ENERGY;

EID: 60349084501     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2008.10.004     Document Type: Article

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