Electrical activation of boron in Si film using excimer laser annealing

Journal of the Korean Physical Society

Volumn 54, Issue 1 PART 2, 2009, Pages 463-466

  Noguchi, Takashi ^a   Kawai, Kenji ^a   Miyahira, Tomoyuki ^a   Suzuki, Toshiharu ^a   Sato, Masateru ^a  

^a UNIVERSITY OF THE RYUKYUS   (Japan)

Author keywords

Conductivity; Excimer laser; Excimer laser annealing (ELA); Hall effect; Resistivity; Thin film transistor (TFT)

Indexed keywords

EID: 60049091985     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: 10.3938/jkps.54.463     Document Type: Conference Paper

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