Study on channel current variation and bias stress behavior of fabricated a-Si:H TFTs with wavy-edge source/drain electrodes

Journal of the Korean Physical Society

Volumn 54, Issue 1 PART 2, 2009, Pages 441-445

  Jeong, Jaewook ^a   Chung, Seungjun ^a   Hong, Yongtaek ^a   Baek, Seung Ho ^b   Tutt, Lee ^b   Burburry, Mitch ^b  

^a Seoul National University   (South Korea)

^b EASTMAN KODAK COMPANY   (United States)

Author keywords

a Si:H; Bias stress test; Printed electrodes; Thin film transistor; Wavy edge

Indexed keywords

EID: 60049089551     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: 10.3938/jkps.54.441     Document Type: Conference Paper

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