Lattice mismatched LPE growth of InGaP on patterned InP substrate

Crystal Research and Technology

Volumn 37, Issue 2-3, 2002, Pages 177-182

  Kaneko, M ^a   Nakayama, S ^a   Kashiwa, K ^a   Aizawa, S ^a   Takahashi, N S ^a  

^a KEIO UNIVERSITY   (Japan)

Author keywords

Epitaxial lateral overgrowth; Liquid phase epitaxy; Long wavelength laser

Indexed keywords

CATHODOLUMINESCENCE; ENERGY GAP; HETEROJUNCTIONS; LATTICE CONSTANTS; LEAKAGE CURRENTS; LIQUID PHASE EPITAXY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR LASERS; SUBSTRATES; X RAY ANALYSIS;

DOUBLE-HETEROSTRUCTURE LASER; EPITAXIAL LATERAL OVERGROWTH TECHNIQUE; INDIUM GALLIUM PHOSPHIDE; LONG-WAVELENGTH LASER; X-RAY ROCKING CURVE;

CRYSTAL LATTICES;

EID: 0036219649     PISSN: 02321300     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-4079(200202)37:2/3<177::AID-CRAT177>3.0.CO;2-Y     Document Type: Article

References (6)

1. Temperature dependence of laser threshold current