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Volumn 311, Issue 3, 2009, Pages 727-730
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Metastability of Zn1-xMgxO/Cu(In,Ga)Se2 solar cells with different conduction band offset values
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Author keywords
B2. Semiconducting quaternary compounds; B2. Semiconducting ternary compounds; B3. Solar cells
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Indexed keywords
ATOMS;
CONDUCTION BANDS;
COPPER;
ELECTRIC CONDUCTIVITY;
ELECTRON MOBILITY;
HEAT CONDUCTION;
HETEROJUNCTIONS;
PHOTOVOLTAIC CELLS;
SEMICONDUCTING SELENIUM COMPOUNDS;
SOLAR CELLS;
SOLAR EQUIPMENT;
TERNARY ALLOYS;
TERNARY SYSTEMS;
WINDOWS;
ZINC;
B2. SEMICONDUCTING QUATERNARY COMPOUNDS;
B2. SEMICONDUCTING TERNARY COMPOUNDS;
B3. SOLAR CELLS;
BARRIER HEIGHTS;
CIGS SOLAR CELLS;
CONDUCTION BAND OFFSETS;
CONDUCTION-BAND MINIMUMS;
CU(IN , GA)SE;
EXTERNAL QUANTUM EFFICIENCIES;
J-V CHARACTERISTICS;
KEY FACTORS;
LIGHT-SOAKING;
METASTABILITY;
PHOTO-GENERATED ELECTRONS;
WHITE LIGHTS;
WINDOW LAYERS;
CURRENT VOLTAGE CHARACTERISTICS;
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EID: 59749095089
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2008.09.082 Document Type: Article |
Times cited : (9)
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References (9)
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