Micro-Raman, SEM, XPS, and electron field emission characterizations of nitrogen-induced shallow defects on nanodiamond films fabricated with different growth parameters

Diamond and Related Materials

Volumn 18, Issue 2-3, 2009, Pages 191-195

  LeQuan, X C ^a   Kang, W P ^a   Davidson, J L ^a   Guo, M ^b   Choi, B K ^a  

^a VANDERBILT UNIVERSITY   (United States)

^b FISK UNIVERSITY   (United States)

Author keywords

Disorder; Grain boundary; Nanodiamond film; Nitrogen; Shallow defect

Indexed keywords

DEFECTS; DIAMOND FILMS; DIAMONDS; ELECTRONIC PROPERTIES; EMISSION SPECTROSCOPY; FIELD EMISSION; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; GRAPHITE; GROWTH (MATERIALS); NITROGEN; NONMETALS; PROBABILITY DENSITY FUNCTION; SPECTROSCOPIC ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

DISORDER; EFFECTIVE WORK FUNCTIONS; ELECTRON FIELD EMISSIONS; ELECTRONIC BEHAVIORS; FIELD EMISSION MEASUREMENTS; FIELD-EMISSION CHARACTERISTICS; FILM MORPHOLOGIES; GRAIN BOUNDARY; GRAPHITE PHASIS; GROWTH CONDITIONS; GROWTH PARAMETERS; MICRO-RAMAN; NANO DIAMONDS; NANODIAMOND FILM; NITROGEN FLOWS; PEAK INTENSITIES; PEAK SHIFTS; SEM; SHALLOW DEFECT; SHALLOW DONORS; XPS;

FILM GROWTH;

EID: 59649086833     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2008.12.003     Document Type: Article

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