Novel electronic structure induced by a highly strained oxide interface with incommensurate crystal fields

Physical Review Letters

Volumn 102, Issue 2, 2009, Pages

  Ou, H W ^a   Zhao, J F ^a   Zhang, Y ^a   Xie, B P ^a   Shen, D W ^a   Zhu, Y ^a   Yang, Z Q ^a   Che, J G ^a   Luo, X G ^b   Chen, X H ^b   Arita, M ^c   Shimada, K ^c   Namatame, H ^c   Taniguchi, M ^c   Cheng, C M ^d   Tsuei, K D ^d   Feng, D L ^a  

^a FUDAN UNIVERSITY   (China)

^b UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

^c HIROSHIMA UNIVERSITY   (Japan)

^d NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BERYLLIUM COMPOUNDS; CHARGE TRANSFER; ELECTRON-PHONON INTERACTIONS; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; EMISSION SPECTROSCOPY; ION EXCHANGE; PHONONS; SINGLE CRYSTALS;

ANGLE-RESOLVED PHOTOEMISSION SPECTROSCOPIES; CRYSTAL FIELDS; ELECTRON PHONONS; HIGH STRAINS; HIGHLY STRAINED; LOW-ENERGY STATE; OXIDE INTERFACES; ROCK SALTS; ROCK-SALT LAYERS;

CRYSTAL STRUCTURE;

EID: 59449094874     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.102.026806     Document Type: Article

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