Effects of rapid thermal annealing on the device characteristics of quantum well infrared photodetectors

Journal of Electronic Materials

Volumn 26, Issue 1, 1997, Pages 43-51

  Sengupta, D K ^a   Fang, W ^a   Malin, J I ^a   Curtis, A P ^a   Horton, T ^a   Kuo, H C ^a   Turnbull, D ^a   Lin, C H ^a   Li, J ^a   Hsieh, K C ^a   Chuang, S L ^a   Adesida, I ^a   Feng, M ^a   Bishop, S G ^a   Stillman, G E ^a   Gibson, J M ^a   Chen, H ^a   Mazumder, J ^a   Liu, H C ^b  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^b NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

Dark current characteristics; Multiple quantum well infrared photodectors (QWIPs); Quantum efficiency; Rapid thermal annealing (RTA); Red shift

Indexed keywords

EID: 5844413289     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-997-0132-6     Document Type: Article

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