Band gap optimization in Cu(In1 - xGax)(Se1 - ySy)2 by controlled Ga and S incorporation during reaction of Cu-(In,Ga) intermetallics in H2Se and H2S

Thin Solid Films

Volumn 517, Issue 7, 2009, Pages 2115-2120

  Alberts, V ^a  

^a UNIVERSITY OF JOHANNESBURG   (South Africa)

Author keywords

Cu(In,Ga)(Se,S)2; Devices; Selenization; Single phase; Sulfurization; Thin films

Indexed keywords

ALLOYS; COPPER; COPPER ALLOYS; COPPER COMPOUNDS; ENERGY CONVERSION; GALLIUM; METALLIC COMPOUNDS; REACTION KINETICS; SEMICONDUCTING SELENIUM COMPOUNDS; THIN FILMS;

CU(IN,GA)(SE,S)2; DEVICES; SELENIZATION; SINGLE-PHASE; SULFURIZATION;

PROCESS CONTROL;

EID: 58949098774     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.10.127     Document Type: Article

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