Fabrication of ZnTe light-emitting diode by Al thermal diffusion through surface oxidation layer

Japanese Journal of Applied Physics

Volumn 47, Issue 11, 2008, Pages 8408-8410

  Tanaka, Tooru ^a   Nishio, Mitsuhiro ^a   Guo, Qixin ^a   Ogawa, Hiroshi ^a  

^a SAGA UNIVERSITY   (Japan)

Author keywords

Electroluminescence; Light emitting diode; Secondary ion mass spectroscopy; Thermal diffusion; ZnTe

Indexed keywords

ALUMINUM; CURRENT DENSITY; DIFFUSION; DIODES; ELECTROLUMINESCENCE; IRRADIATION; LIGHT; LIGHT EMISSION; LUMINESCENCE; MASS SPECTROMETERS; MASS SPECTROMETRY; OXIDATION; SEMICONDUCTING ZINC COMPOUNDS; SURFACE DIFFUSION; THERMAL DIFFUSION; THERMAL DIFFUSION IN LIQUIDS; ZINC COMPOUNDS;

AL CONCENTRATIONS; IRRADIATION TIME; LIGHT-EMITTING DIODE; OXIDATION LAYERS; SECONDARY-ION MASS SPECTROSCOPY; SURFACE OXIDATIONS; ZNTE;

LIGHT EMITTING DIODES;

EID: 58749101049     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.8408     Document Type: Article

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