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Volumn 81, Issue 11, 1997, Pages 7295-7300

Structures and defects in arsenic-ion-implanted GaAs films annealed at high temperatures

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Indexed keywords


EID: 5844294979     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.365327     Document Type: Article
Times cited : (4)

References (52)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.