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Applied Physics Letters

Volumn 94, Issue 2, 2009, Pages

Normal and reversed tunable magnetoresistance in a NiOx /p -doped silicon diode

(2) Ćspedes, Oscar a,b Viret, Michel a

a SERVICE DE PHYSIQUE DE L ETAT CONDENSÉ (France)

b KYUSHU UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIODES; DISTILLATION; ELECTRIC RESISTANCE; MAGNETIC FIELD EFFECTS; MAGNETOELECTRONICS; MAGNETORESISTANCE; PHOSPHORUS; SUPERPARAMAGNETISM; THIN FILMS;

BI LAYERS; DOPED SILICONS; HIGHLY EFFICIENT; MAXIMUM RATIOS; NICKEL THIN FILMS; NONSTOICHIOMETRIC; SUPERPARAMAGNETIC; TRANSITION TEMPERATURES; TRANSPORT MEASUREMENTS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 58349104193 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3070519 Document Type: Article

Times cited : (1)

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