Capacitance of thin ferroelectric films obtained with different methods

IEEE International Symposium on Applications of Ferroelectrics

Volumn 1, Issue , 2008, Pages

  Li, Huadong ^a   Subramanyam, Guru ^a   Wang, Jiadong ^a  

^a University of Dayton

Author keywords

[No Author keywords available]

Indexed keywords

ALTERNATE CURRENTS; DC BIASES; LINEAR POLARIZATIONS; PEAK VALUES; SMALL SIGNALS; SWITCHING POLARIZATIONS; TWO TYPES; V CURVES;

CAPACITANCE; ELECTRIC NETWORK ANALYSIS; FERROELECTRIC MATERIALS; FERROELECTRICITY; HYSTERESIS; LEAD; PIEZOELECTRIC TRANSDUCERS; POLARIZATION; ZIRCONIUM;

FERROELECTRIC FILMS;

EID: 58149515772     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISAF.2008.4693924     Document Type: Conference Paper

References (5)

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2. F. K. Chai, "Profiling of electric doping concentration in ferroelectrics", J. Appl. Phys, 82 (5), Sept, 1997, pp. 2517-2527.
3. H. Chen and J. Y. Lee, "Electron trapping process in ferroelectric lead-zirconate-titanate thin film capacitors", Applied Physics Letters, Vol. 73, No. 3, July 1998, pp. 309-311.
4. B. M. Goltsman, V. K. Yarmarkin, and V. V. Lemanov, "Influence of Mobile Charged Defects on the Dielectric Non-Linearity of Thin Ferroelectric PZT Films", Physics of Solid -State, Vol. 42, No. 6, 2000, pp. 1116-1119.
5. H. Li, G. Subramanyam, J. Wang, "Performance of Thin Film Ferroelectrics with Dopant-ion Charges", Proceedings of International Symposium on Integrated Ferroelectrics (ISIF 2007), submitted to Integrated Ferroelectrics, December 2007.