Room-temperature tensile creep of a PZT wafer in short and open-circuit conditions

Journal of the Ceramic Society of Japan

Volumn 116, Issue 1349, 2008, Pages 158-162

  Lee, Chang Hoan ^a   Lee, Soo Il ^b   Kim, Sang Joo ^b  

^a Korea Institute of Science and Technology Information (KISTI)   (South Korea)

^b University of Seoul   (South Korea)

Author keywords

Creep power law; Domain switching; PZT wafer; Tensile loading

Indexed keywords

ELECTRIC FIELDS; STRAIN; TENSILE STRESS; TIMING CIRCUITS;

CREEP POWER; DOMAIN SWITCHINGS; ELECTRIC DISPLACEMENT; LONGITUDINAL TENSILE; OPEN CIRCUIT CONDITIONS; PZT WAFER; TENSILE LOADING; THICKNESS DIRECTION;

CREEP;

EID: 44649105650     PISSN: 18820743     EISSN: 13486535     Source Type: Journal    
DOI: 10.2109/jcersj2.116.158     Document Type: Article

References (9)

1. Q. D. Liu and J. E. Huber, J. Eur. Ceram. Soc, 26, 2799-2806 (2006).
2. D. Zhou and M. Kamlah, Acta Mater., 54, 1389-1396 (2006).
3. E. C. Subbarao, M. C. McQuarrie and W. R. Buessem, J. Appl. Phys., 28, 1194-1200 (1957).
4. T. Fett, G. J. Thun, Mater. Sci. Lett., 17, 1929-1931 (1998).
5. O. Guillon, F. Thiebaud, P. Delobelle and D. Perreux, Mater. Lett., 58, 986-990 (2004).
6. T. Fett and D. Munz, J. Testing Evaluation, 28, 27-35 (2000).
7. S. J. Kim, Int. J. Eng. Sci., 45, 770-785 (2007).
8. S. J. Kim and Seelecke, S., Int. J. Solids Struc., 44, 1196-1209 (2007).
9. S. J. Kim, Mater. Sci. Eng. B, 141, 34-42 (2007).