Influence of built-in internal electric field on ferroelectric film properties and phase diagram

Ferroelectrics

Volumn 354, Issue 1, 2007, Pages 86-98

  Glinchuk, M D ^a   Eliseev, E A ^a   Morozovska, A N ^b  

^a FRANTSEVICH INSTITUTE FOR PROBLEMS OF MATERIALS SCIENCE   (Ukraine)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

Author keywords

Built in field; Mismatch effect; Size driven phase transition; Thin film

Indexed keywords

ALGEBRAIC EXPRESSION; BROKEN SYMMETRY; CALCULATION OF PHASE DIAGRAMS; COMPRESSIVE STRAIN; CRITICAL THICKNESS; DEPOLARIZATION FIELDS; DIELECTRIC PERMITTIVITIES; EULER-LAGRANGE EQUATIONS; FERROELECTRIC PHASE; FILM SURFACES; FREE-ENERGY EXPANSION; IN-FIELD; INTERNAL ELECTRIC FIELDS; MAXIMUM TEMPERATURE; MISFIT STRAINS; MISMATCH EFFECT; MISMATCH EFFECTS; MONOLAYER FILM; PARAELECTRIC PHASE TRANSITION; PHENOMENOLOGICAL GINZBURG-LANDAU THEORY; PIEZO-ELECTRIC EFFECTS; POLAR STATE; POLARIZATION COMPONENTS; POLARIZATION PHENOMENA; PYROELECTRIC COEFFICIENTS; PZT; SIZE-DRIVEN PHASE TRANSITION; STRAINED FILMS; VARIATIONAL METHODS;

CRYSTALLOGRAPHY; DIFFERENTIAL EQUATIONS; ELECTRIC FIELDS; ELECTRIC LOAD FORECASTING; ELECTRIC PROPERTIES; ELECTRON TRANSITIONS; EULER EQUATIONS; FERROELECTRIC DEVICES; FERROELECTRIC FILMS; FERROELECTRICITY; FREE ENERGY; HYSTERESIS; MAGNETIC FILMS; MANGANITES; MONOLAYERS; PERMITTIVITY; PHASE DIAGRAMS; PIEZOELECTRICITY; POLARIZATION; SURFACE TENSION; THIN FILM DEVICES; THIN FILMS;

PHASE TRANSITIONS;

EID: 58149265547     PISSN: 00150193     EISSN: 15635112     Source Type: Journal    
DOI: 10.1080/00150190701454628     Document Type: Conference Paper

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