Horizontally-aligned single-walled carbon nanotubes on sapphire

Journal of Nanoscience and Nanotechnology

Volumn 8, Issue 11, 2008, Pages 6165-6169

  Ago, Hiroki ^a,b   Ishigami, Naoki ^a   Imamoto, Kenta ^a   Suzuki, Tomoko ^a   Ikeda, Ken Ichi ^a   Tsuji, Masaharu ^a   Ikuta, Tatsuya ^a   Takahashi, Koji ^a  

^a KYUSHU UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Aligned growth; Carbon nanotubes; CVD; Field effect transistors; Sapphire

Indexed keywords

ALIGNED GROWTH; ATOMIC ARRANGEMENTS; CRYSTALLOGRAPHIC DIRECTIONS; CVD; ELECTRON TRANSPORT MEASUREMENTS; GROWTH DIRECTIONS; PLANE SAPPHIRES; SAPPHIRE SURFACES;

CHEMICAL VAPOR DEPOSITION; CORUNDUM; FIELD EFFECT TRANSISTORS; GROWTH (MATERIALS); NANOCOMPOSITES; NANOTUBES; SAPPHIRE; SINGLE CRYSTALS; SINGLE-WALLED CARBON NANOTUBES (SWCN); SURFACE STRUCTURE; TRANSISTORS;

CARBON NANOTUBES;

ALUMINUM OXIDE; CARBON NANOTUBE;

ARTICLE; CHEMISTRY; CONFORMATION; CRYSTALLIZATION; MACROMOLECULE; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; SURFACE PROPERTY; ULTRASTRUCTURE;

ALUMINUM OXIDE; CRYSTALLIZATION; MACROMOLECULAR SUBSTANCES; MATERIALS TESTING; MOLECULAR CONFORMATION; NANOTECHNOLOGY; NANOTUBES, CARBON; PARTICLE SIZE; SURFACE PROPERTIES;

EID: 58149252462     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2008.SW01     Document Type: Article

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