Ambipolar permeable metal-base transistor based on NPB/C60 heterojunction

Organic Electronics

Volumn 10, Issue 1, 2009, Pages 210-213

  Huang, Jinying ^a   Yi, Mingdong ^a   Hümmelgen, Ivo A ^b   Ma, Dongge ^a  

^a CHANGCHUN INSTITUTE OF APPLIED CHEMISTRY   (China)

^b FEDERAL UNIVERSITY OF PARANÁ   (Brazil)

Author keywords

Air stable; Ambipolar; Heterojunction; Organic; Permeable metal base transistor

Indexed keywords

TRANSISTORS;

AIR STABLE; AMBIPOLAR; AMBIPOLAR BEHAVIOR; COMMON-BASE CHARACTERISTICS; METAL BASE TRANSISTORS; ORGANIC; ORGANIC TRANSISTOR; P TYPE AND N TYPES;

HETEROJUNCTIONS;

EID: 58149102428     PISSN: 15661199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.orgel.2008.10.019     Document Type: Article

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