Power semiconductors state-of-art and development trends

7th Internatonal Conference on Power Electronics, ICPE'07

Volumn , Issue , 2007, Pages 683-686

  Lorenz, Leo ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

MINIATURE INSTRUMENTS; POWER ELECTRONICS;

HIGH OPERATING TEMPERATURE; INDUSTRIAL SEGMENTS; OVERLOAD CAPABILITY; POWER ELECTRONIC SYSTEMS; POWER SEMICONDUCTORS; RATIONAL USE OF ENERGIES; SYSTEM INTEGRATION; UTILIZATION SYSTEMS;

RELIABILITY;

EID: 58149098200     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICPE.2007.4692474     Document Type: Conference Paper

References (7)

1. F.-J. Niedernostheide, H.-J. Schulze, U. Kellner-Werdehausen, Self-Protected High-Power Thyristors", Proc PCIM'2001, Power Conversion, Nuremberg, Germany, pp. 51-56,2001.
2. T. Laska, F. Pfirsch, F. Hirler, J. Niedermeyr, C. Schaeffer, T. Schmidt" 1200V-Trench-IGBT Study with Square Short Circuit SOA", Proceedings of the l0thlSPSD, pp.433-436, 1998
3. T.Laska, G.Miller, C.Schaffer, F.Umbach, "Field Slop IGBTs with Dynamic Clamping Capability A New Degree of Freedom for Future Inverter Designs?", to be published of EPE, 2005
4. L. Lorenz, M. März, "CoolMOS A new approach towards high efficient power supplies ", PCIM Hong Kong' 98 Proceedings
5. L. Lorenz, "CoolMOS A New Approach Towards An Idealized Power Switch ", EPE '99 Lausanne Proceedings
6. TM - a new milestone in high voltage power MOS", Proc. PCIM 98 Nümberg
7. H. Mitlehner, W. Bartsch, K.-O. Dohnke, P. Friedrichs, R.Kaltschmidt, U. Weinert, B. Weis and D. Stephani., Dynamic characteristics of high voltage 4H-SiC' vertical JFETs ", Proc. ISPSD 99, pp. 339-342, To-ronto 1999.