Bandwidth and charge balancing of partially depleted absorber photodiodes

IEEE Journal of Quantum Electronics

Volumn 43, Issue 11, 2007, Pages 992-997

  Yoder, P D ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Photodiodes; Semiconductor device modeling

Indexed keywords

BOLTZMANN TRANSPORT EQUATION; CHARGE BALANCING; DEPLETION REGION; DESIGN GOAL; EQUIVALENT CIRCUIT MODEL; FIELD STRENGTHS; HIGH BANDWIDTH; MODULATION BANDWIDTH; OPTICAL SATURATION; PARTIALLY DEPLETED ABSORBER PHOTODIODES; QUANTITATIVE AGREEMENT; SEMICONDUCTOR DEVICE MODELING;

BANDWIDTH; BOLTZMANN EQUATION; FREQUENCY RESPONSE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR SWITCHES;

PHOTODIODES;

EID: 58049195601     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2007.904460     Document Type: Article

References (12)

1. D. A. Tulchinsky, X. Li, N. Li, S. Demiguel, J. C. Campbell, and K. J. Williams, "High-saturation current wide-bandwidth photodetectors," IEEE J. Sel. Topics Quantum Electron., vol.10, no.4, pp. 702-708, Jul.-Aug. 2004.
2. X. Li, N. Li, S. Deminguel, J. C. Campbell, D. Tulchinskya, and K. J. Williams, "High-saturation-current, wide-bandwidth photodiodes," presented at the IEEE Int. Top. Meet. Microw. Photon., Ogunquit, ME, 2004.
3. D. A. Tulchinsky, K. J. Williams, X. Li, N. Li, and J. Campbell, "Highpower photodetectors," IEEE LEOS Newslett., vol.19, pp. 16-17, 2005.
4. D. A. Tulchinsky, K. J. Williams, X. Li, N. Li, and J. C. Campbell, "High power photodetectors for microwave photonic links," presented at the IEEE Avionics, Fiber-Optics and Photon. Technol. Conf., Minneapolis, MN, 2005.
5. X. Li, N. Li, S. Demiguel, X. Zheng, J. C. Campbell, H. H. Tan, and C. Jagadish, "A partially depleted absorber photodiode with graded doping injection regions," IEEE Photon. Technol. Lett., vol.16, no.10, pp. 2326-2328, Oct. 2004.
6. G. Lucovsky, R. F. Schwarz, and R. B. Emmons, "Transit-time considerations in p-i-n diodes," J. Appl. Phys., vol.35, pp. 622-628, 1964.
7. J. E. Bowers, C. A. Burrus, and R. J. McCoy, "InGaAs PIN photodetectors with modulation response to millimetre wavelengths," Electron. Lett., vol.21, pp. 812-814, 1985.
8. K. Hess, Advanced Theory of Semiconductor Devices. Englewood Cliffs, NJ: Prentice-Hall, 1988.
9. S. Adachi, Physical Properties of III-V Semiconductor Compounds InP, InAs, GaAs, GaP, InGaAs and InGaAsP. New York: Wiley, 1992.
10. P. D. Yoder and E. J. Flynn, "Linear theory of the quasi-unipolar photodiode," J. Lightw. Technol., vol.24, no.5, pp. 1937-1945, May 2005.
11. T. Ishibashi, S. Kodama, N. Shimizu, and T. Furuta, "High-speed response of uni-traveling-carrier photodiodes," Jpn. J. Appl. Phys., vol.36, pp. 6263-6268, 1997.
12. W. Shockley, "Currents to conductors induced by a moving point charge," J. Appl. Phys., vol.9, pp. 635-636, 1938.