Pentacene thin film transistors fabricated by solution process with directional crystal growth

Organic Electronics

Volumn 10, Issue 1, 2009, Pages 107-114

  Natsume, Yutaka ^a   Minakata, Takashi ^a   Aoyagi, Takeshi ^a  

^a ASAHI KASEI CORPORATION   (Japan)

Author keywords

Crystal growth; Field effect transistor; Pentacene; Solution process

Indexed keywords

CRYSTAL GROWTH; FABRICATION; FIELD EFFECT TRANSISTORS; FILM GROWTH; SEMICONDUCTING ORGANIC COMPOUNDS; SUBSTRATES; THIN FILM TRANSISTORS; THIN FILMS; X RAY DIFFRACTION;

DIRECTIONAL GROWTH; GRAZING INCIDENCE X-RAY DIFFRACTION; HIGH CARRIER MOBILITY; LOW DRAIN VOLTAGES; PENTACENE THIN FILM TRANSISTORS; PENTACENES; SOLUTION PROCESS; SOLUTION-PROCESSING;

THIN FILM CIRCUITS;

EID: 58049189533     PISSN: 15661199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.orgel.2008.10.005     Document Type: Article

References (27)

1. Crone B., Dodabalapur A., Lin Y.-Y., Filas R.W., Bao Z., LaDuca A., Sarpeshkar R., Katz H.E., and Lin W. Nature 403 (2000) 521
2. Baude P.F., Ender D.A., Haase M.A., Kelly T.W., Muyres D.V., and Theiss S.D. Appl. Phys. Lett. 82 (2003) 3964
3. Crone B., Dodabalapur A., Gelperin A., Torsi L., Katz H.E., Lovinger A.J., and Bao Z. Appl. Phys. Lett. 78 (2001) 2229
4. Dimitrakopoulos C.D., and Malenfant P.R.L. Adv. Matter 14 (2002) 99
5. Lin Y.-Y., Gundlach D.J., Nelson S.F., and Jackson T.N. IEEE Electron Devic. Lett. 18 (2002) 606
6. Payne M.M., Odom S.A., Parkin S.R., and Anthony J.E. Org. Lett. 6 (2004) 3325
7. Meng H., Zheng J., Lovinger A.J., Wang B.-C., Gregory P., Patten V., and Bao Z. Chem. Mater. 5 (2003) 1778
8. Mas-Torrent M., Hadley P., Bromley S., Ribas X., Tarres J., Mas M., Molins E., Veciana J., and Rovira C. J. Am. Chem. Soc. 126 (2004) 8546
9. Takimiya K., Ebata H., Sakamoto K., Izawa T., Otsubo T., and Kunugi Y. J. Am. Chem. Soc. 128 (2006) 12604
10. Valiyev F., Hu W.-S., Chen H.-Y., Kuo M.-Y., Chao I., and Tao Y.-T. Chem. Mater. 19 (2007) 3018
11. Klauk H., Gundlach D.J., Nichols J.A., Sheraw C.D., Bonse M., and Jackson T.N. Solid State Technol. 43 (2000) 63
12. Herwig P.T., and Mullen K. Adv. Mater. 11 (1999) 480
13. Afzali A., Dimitrakopoulos C.D., and Breen T.L. J. Am. Chem. Soc. 124 (2004) 8812
14. Park S.K., Jackson T.N., Anthony J.E., and Mourey D.A. Appl. Phys. Lett. 91 (2007) 063514
15. Minakata T., and Natsume Y. Synth. Met. 153 (2005) 1
16. Kawasaki M., Imazeki S., Hirota S., Arai T., Shiba T., Ando M., Natsume Y., Minakata T., Uemura S., and Kamata T. SID Int. Symp. Dig. Tech. Papers 38 (2007) 1761
17. Matsuno S., Kuba M., Nayuki T., Soga S., and Yuen P.W.T. Rigaku J. 17 (2000) 36
18. 2 ver. 3.8 (accelrys) was used for the simulation of electron diffraction patterns.
19. Campbell R.B., Robertson J.M., and Trotter J. Acta Crystallogr. 15 (1962) 289
20. Siegrist T., Besnard C., Haas S., Schiltz M., Pattison P., Chernyshov D., Batlogg B., and Kloc C. Adv. Mater. 19 (2007) 2079
21. Della Valle R.G., Venuti E., Brillante A., and Girlando A. J. Chem. Phys. 118 (2003) 807
22. Y. Natsume, et al. Synth. Met. (2008), doi:10.1016/j.synthmet.2008.09.007.
23. Northrup J.E., Tiago M.L., and Louie S.G. Phys. Rev. B 66 (2002) 121404
24. Docherty R., Clydesdale G., Roberts K.J., and Bennema P. J. Phys. D 24 (1991) 89
25. Berkovitch-Yellin Z. J. Am. Chem. Soc. 107 (1985) 8239
26. Troisi A., and Orlandi G. J. Phys. Chem. B 109 (2005) 1849
27. Lee J.Y., Roth S., and Park Y.W. Appl. Phys. Lett. 88 (2006) 252106