The new power semiconductor generation: 1200V IGBT4 and EmCon4 diode

Proceedings of India International Conference on Power Electronics, IICPE 2006

Volumn , Issue , 2006, Pages 77-82

  Volke, A ^a   Baessler, M ^b   Umbach, Frank ^b   Hille, Frank ^b   Rusche, W ^b   Hornkamp, M ^b  

^a Infineon Technologies   (China)

^b INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; SEMICONDUCTOR DIODES; SEMICONDUCTOR MATERIALS;

HIGH POWERS; INFINEON; NEW TECHNOLOGIES; POWER LEVELS; POWER SEMICONDUCTORS; THERMAL PERFORMANCES;

POWER ELECTRONICS;

EID: 58049158366     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IICPE.2006.4685345     Document Type: Conference Paper

References (8)

1. T. LASKA, M. MUENZER, F. PFIRSCH, C. SCHAEFFER, T. SCHMIDT, "The Field Stop IGBT (FS IGBT) - A new power device concept with a great improvement potential", ISPSD 2000
2. M. BAESSLER, P. KANSCHAT, F. UMBACH, C. SCHAEFFER, "1200V IGBT4 -High Power- a new Technology Generation with Optimized Characteristics for High Current Modules", PCIM Nuremberg 2006
3. B. GUTSMANN, P. KANSCHAT, M. MUENZER, M. PFAFFENLEHNER, T. LASKA, "Repetitive short circuit behaviour of Trench-/Field-Stop IGBTs", PCIM Nuremberg 2003
4. W. RUSCHE, "Differences of IGBT3 generations", eupec Application Note 2005
5. W. RUSCHE, C. LUEBKE, M. MUENZER, "Switching behavior and optimal driving of IGBT modules", eupec Application Note 2003
6. IPOSIM, IGBT Power Simulation for Infineon/eupec Modules, available at http://www.infineon.com
7. IGBT Module FS150R12KT3 datasheet available at http://www.infineon.com
8. P. LUNIEWSKI, U. JANSEN, M. HORNKAMP, "Dynamic voltage rise control, the most efficient way to control turn-off switching behaviour of IGBT transistors", PELINCEC 2005