Broadband antireflective structures for the THz spectral range fabricated on high resistive float zone silicon

33rd International Conference on Infrared and Millimeter Waves and the 16th International Conference on Terahertz Electronics, 2008, IRMMW-THz 2008

Volumn , Issue , 2008, Pages

  Brückner, Claudia ^a,b   Käsebier, Thomas ^b   Pradarutti, Boris ^a,b   Riehemann, Stefan ^a   Notni, Gunther ^a   Kley, Ernst Bernhard ^b   Tünnermann, Andreas ^a,b  

^a FRAUNHOFER INSTITUTE FOR APPLIED OPTICS AND PRECISION ENGINEERING   (Germany)

^b FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; MILLIMETER WAVE DEVICES; MILLIMETER WAVES; SEMICONDUCTOR MATERIALS;

ANTIREFLECTIVE STRUCTURES; DEEP REACTIVE ION ETCHINGS; ELECTRIC FIELD STRENGTHS; FLOAT ZONE SILICONS; RECTANGULAR STRUCTURES; SPECTRAL RANGES; STRUCTURED SURFACES; THZ SPECTRAL RANGES;

REACTIVE ION ETCHING;

EID: 58049103187     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICIMW.2008.4665564     Document Type: Conference Paper

References (4)

1. J. Dai, J. Zhang, W. Zhang and D. Grischkowsky, "Terahertz time-domain spectroscopy characterization of the far-infrared absorption and index of refraction of high-resistivity, float-zone silicon," in J. Opt. Soc. Am. B, vol. 21, no. 7, 2004, pp. 1379-1386.
2. C. Brückner, B. Pradarutti, O. Stenzel, R. Steinkopf, S. Riehemann, G. Notni, and A. Tünnermann, "Broadband antireflective surface-relief structure for THz optics," in Opt. Express, vol. 15, no. 3, 2007, pp. 779-789.
3. E.B. Grann, M.G. Moharam and D.A. Pommet, "Artificial uniaxial and biaxial dielectrics with use of two-dimensional subwavelength binary gratings," in J. Opt. Soc. Am A, vol. 11, no. 10, 1994, pp. 2695-2703.
4. S. Rytov, "Electromagnetic Properties of a Finely Stratified Medium," in Soviet Physics JETP, vol. 2, no. 3, 1956, pp. 466-475.