A chemically amplified resist process for 0.25 μ m generation photomasks

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 2793, Issue , 1996, Pages 96-104

  Katsumata, Mikio ^a   Kawahira, Hiroichi ^a   Sugawara, Minoru ^a   Nozawa, Satoru ^a  

^a SONY CORPORATION   (Japan)

Author keywords

0.25 m device generation reticle; Chemically amplified resist; Dry etching; Photomask; Post exposure bake

Indexed keywords

DRY ETCHING; MASKS; PHOTOMASKS; PHOTORESISTS; X RAYS;

CHEMICALLY AMPLIFIED; CHEMICALLY AMPLIFIED RESIST; CRITICAL DIMENSION UNIFORMITIES; DEVICE GENERATION; ELECTRON BEAM RESIST; OPTICAL PROXIMITY EFFECT CORRECTIONS; POSTEXPOSURE BAKE; RETICLE FABRICATION;

OPTICAL INSTRUMENTS;

EID: 57949088509     PISSN: 0277786X     EISSN: 1996756X     Source Type: Conference Proceeding    
DOI: 10.1117/12.245249     Document Type: Conference Paper

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