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Volumn 2793, Issue , 1996, Pages 22-33

Manufacturing Feasibility of OPC Masks for 0.25 μm Rule Devices

Author keywords

Defect inspection; Defect repair; Eb proximity effect correction; Focused ion beam; Mask; Mask data; Mask defect; Optical proximity effect correction; Photomask

Indexed keywords

DEFECTS; FOCUSED ION BEAMS; ION BEAMS; MANUFACTURE; MASKS; PHOTOLITHOGRAPHY; REPAIR; X RAYS;

EID: 57949099148     PISSN: 0277786X     EISSN: 1996756X     Source Type: Conference Proceeding    
DOI: 10.1117/12.245218     Document Type: Conference Paper
Times cited : (3)

References (9)
  • 2
    • 85076494700 scopus 로고
    • 'Wafer proximity effect correction and its impact on mask-making
    • 1. Issue
    • J. P. Stirniman and M. L. Rieger, 'Wafer proximity effect correction and its impact on mask-making", BACUS News, \1. 10 Issue 1(1994)1.
    • (1994) Bacus News , vol.10 , Issue.1 , pp. 1
    • Stirniman, J.P.1    Rieger, M.L.2
  • 3
    • 85079281239 scopus 로고    scopus 로고
    • A chemically amplified resist process for 0.25 j.lm generation photomasks
    • (this Symposium), to be published in Proc. SPIE, \kil
    • M. Katsumata, M. Sugawara, H. Kawahira, A. Ogura and S. Nozawa, "A chemically amplified resist process for 0.25 J.Lm generation photomasks", Photom ask Japan '96 (this Symposium), to be published in Proc. SPIE, \kil. 2793(1996).
    • (1996) Photom Ask Japan , vol.96 , pp. 2793
    • Katsumata, M.1    Sugawara, M.2    Kawahira, H.3    Ogura, A.4    Nozawa, S.5
  • 5
    • 0029545519 scopus 로고
    • A fast eb-pec system for 0.25 tm device reticle fabrication using a variable shaped beam machine
    • \k)l
    • M. Tomita, H. Ohnuma, M. Koyama and H. Kawahira, "A fast EB-PEC system for 0.25 tm device reticle fabrication using a variable shaped beam machine", Proc. S PIE, \k)l. 2621(1995)546.
    • (1995) Proc. S Pie , vol.2621 , pp. 546
    • Tomita, M.1    Ohnuma, H.2    Koyama, M.3    Kawahira, H.4
  • 6
    • 85079287134 scopus 로고    scopus 로고
    • MEBES4500 is a registered trademark of ETEC Corporation, Hayward, CA
    • MEBES4500 is a registered trademark of ETEC Corporation, Hayward, CA.
  • 7
    • 85079271373 scopus 로고    scopus 로고
    • KLA331 is a registered trademark of KLA Instruments Corporation, San Jose, CA
    • KLA331 is a registered trademark of KLA Instruments Corporation, San Jose, CA.
  • 8
    • 0141431217 scopus 로고
    • A fast resist image estimation methodology using light intensity distribution
    • \bl. 2512
    • K. Tsudaka, M. Tomita, M. Sugawara, H. Kawahira and S. Nozawa, "A fast resist image estimation methodology using light intensity distribution", Proc. SPIE, \bl. 2512(1995)384.
    • (1995) Proc. Spie , pp. 384
    • Tsudaka, K.1    Tomita, M.2    Sugawara, M.3    Kawahira, H.4    Nozawa, S.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.