Impact of extension and source/drain resistance on FinFET performance

Proceedings - IEEE International SOI Conference

Volumn , Issue , 2008, Pages 159-160

  Matsukawa, T ^a   Endo, K ^a   Ishikawa, Y ^a   Yamauchi, H ^a   Liu, Y X ^a   O'Uchi, S ^a   Tsukada, J ^a   Ishii, K ^a   Sakamoto, K ^a   Suzuki, E ^a   Masahara, M ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD EFFECT TRANSISTORS; FINS (HEAT EXCHANGE);

MEASUREMENT BASED ANALYSES; PARASITIC RESISTANCES; SOURCE/DRAIN RESISTANCES;

IMPACT RESISTANCE;

EID: 57749208381     PISSN: 1078621X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SOI.2008.4656343     Document Type: Conference Paper

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4. Y.Nishi et al., Jpn.J.Appl.Phys., 47, 99 (2008).
5. K.Endo et al., IEEE EDL., 28, 1123 (2007).