A new treatment for kinetics of oxidation of silicon carbide

Ceramics International

Volumn 35, Issue 2, 2009, Pages 603-607

  Hou, Xin mei ^a   Chou, Kuo Chih ^a,b   Li, Fu shen ^a  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING   (China)

^b SHANGHAI UNIVERSITY   (China)

Author keywords

Kinetics; Mechanism; Oxidation; SiC

Indexed keywords

CHEMICAL VAPOR DEPOSITION; EXPERIMENTS; OXIDATION; OXYGEN; PELLETIZING;

ISOTHERMAL DATUMS; KINETICS OF OXIDATIONS; NEW MODELS; ON CURRENTS; OXIDATION BEHAVIORS; OXYGEN PARTIAL PRESSURES; SHORT-COMINGS; SIC; WEIGHT GAINS;

SILICON CARBIDE;

EID: 57749088782     PISSN: 02728842     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ceramint.2008.01.015     Document Type: Article

References (17)

1. Krawiec P., and Kaskel S. Thermal stability of high surface area silicon carbide materials. J. Solid State Chem. 179 (2006) 2281-2289
2. Levine S.R., Opila E.J., Halbig M.C., et al. Evaluation of uitra-high temperature ceramics for aeropropulsion use. J. Eur. Ceram. Soc. 22 (2002) 2757-2767
3. Opila E.J. Oxidation kinetics of chemically-vapor-deposited silicon carbide in wet oxygen. J. Am. Ceram. Soc. 77 3 (1994) 730-736
4. Zheng Z., Tressler R.E., and Spear K.E. Oxidation of single-crystal silicon carbide, Part I: experimental studies. J. Electrochem. Soc. 137 3 (1990) 850-855
5. Luthra K.L. Some new perspectives on the oxidation of silicon carbide and silicon nitride. J. Am. Ceram. Soc. 74 5 (1991) 1095-1103
6. Opila E.J., and Hann Jr. R.E. Paralinear oxidation of CVD SiC in water vapor. J. Am. Ceram. Soc. 80 1 (1997) 197-205
7. Opila E.J. Influnence fif alumina reaction tube impurities in the oxidation of chemically-vapor-deposited silicon carbide. J. Am. Ceram. Soc. 78 4 (1995) 1107-1110
8. Du W.F., Xiao H.N., and Du H.Q. the oxidation of SiC-matrix multiphase ceramics at high temperature and its effect on strength. J. Chin. Ceram. Soc. 20 5 (1992) 417-422
9. 4. J. Electrochem. Soc. 142 3 (1995) 925-930
10. Tian T.Y., Zhang Y.J., Sun F., and Wei H.K. Study on oxidation resistance of ZrB2-SiC composite. Chinese Ceram. 5 (2006) 19-21 (in Chinese)
11. 4. J. Alloy. Comp. 459 (2008) 123-129
12. Chou K.C. A kinetic model for oxidation of Si-Al-O-N materials. J. Am. Ceram. Soc. 89 5 (2006) 1568-1576
13. Vaughn W.L., and Maahs H.G. Active-to-passive transition in the oxidation of silicon carbide and silicon nitride in air. J. Am. Ceram. Soc. 73 6 (1990) 1540-1543
14. -3 torr oxygen pressure. J. Electrochem. Soc. 113-1 1-6 (1966) 1311-1314
15. Cotello J.A., and Tressler R.E. Oxidation kinetics of silicon carbide crystals and ceramics-1: in dry oxygen. J. Am. Ceram. Soc. 69 9 (1986) 674-681
16. 4. J. Electrochem. Soc. 136 (1989) 3210-3215
17. Zheng Z., Tressler R.E., and Spear K.E. Effect of sodium contamination on the oxidation of single crystal carbide. Corros. Sci. 33 4 (1992) 569-580