High pressure induced phase transition in sulfur doped indium phosphide: An angular-dispersive X-ray diffraction and Raman study

Solid State Communications

Volumn 149, Issue 3-4, 2009, Pages 136-141

  Lin, Chih Ming ^a   Sheu, Hwo Shuenn ^b   Tsai, Min Hsiung ^c   Wu, Bi Ru ^d   Jian, Sheng Rui ^e  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b NATIONAL SYNCHROTRON RADIATION RESEARCH CENTER   (Taiwan)

^c NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^d CHANG GUNG UNIVERSITY   (Taiwan)

^e I SHOU UNIVERSITY   (Taiwan)

Author keywords

A. Sulfur doped indium phosphide; E. Angular dispersive X ray diffraction; E. High pressure

Indexed keywords

DATA COMPRESSION; DIFFRACTION; EQUATIONS OF STATE; INDIUM; INDIUM PHOSPHIDE; SULFUR; X RAY ANALYSIS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; ZINC;

A. SULFUR DOPED INDIUM PHOSPHIDE; AMBIENT TEMPERATURES; E. ANGULAR-DISPERSIVE X-RAY DIFFRACTION; E. HIGH PRESSURE; HIGH PRESSURES; IN SITU RAMAN; IN-SITU; INDUCED PHASE TRANSITIONS; IONICITY; ISOTHERMAL BULK MODULUS; MURNAGHAN EQUATION OF STATES; ORTHORHOMBIC STRUCTURES; PRESSURE DERIVATIVES; RAMAN STUDIES; ROCK SALT STRUCTURES; SALT PHASE; SPACE GROUPS; TRANSITION PRESSURES; VOLUME COMPRESSIONS; X-RAY DIFFRACTIONS;

PHASE TRANSITIONS;

EID: 57649085455     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2008.10.038     Document Type: Article

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