Temperature dependences of energies and broadening parameters of the band-edge excitons of Re-doped WS2 and 2H-WS2 single crystals

Journal of Physics Condensed Matter

Volumn 16, Issue 39, 2004, Pages 6995-7005

  Yen, P C ^a   Hsu, H P ^a   Liu, Y T ^a   Huang, Y S ^a   Tiong, K K ^b  

^a NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^b NATIONAL TAIWAN OCEAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ELECTRON TRANSITIONS; ELECTRONIC DENSITY OF STATES; EXCITONS; RAMAN SCATTERING; RHENIUM; TUNGSTEN COMPOUNDS;

BAND EDGE EXCITONS; BOSE EINSTEIN EQUATIONS; IMPURITY SCATTERING; PHONON COUPLING CONSTANT;

SINGLE CRYSTALS;

EID: 5744249801     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/16/39/032     Document Type: Article

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