A 2 GHz oscillator using a monolithically integrated AlN TFBAR

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 2008, Pages 843-846

  Norling, Martin ^a   Enlund, Johannes ^b   Katardjiev, Ilia ^b   Gevorgian, Spartak ^a,c  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b UPPSALA UNIVERSITY   (Sweden)

^c Ericsson Microwave Systems AB   (Sweden)

Author keywords

Acoustic resonator; Hybrid integration; Multi chip module; Oscillator; TFBAR; Thin film device

Indexed keywords

ACOUSTIC RESONATORS; ACOUSTICS; CIVIL AVIATION; ELECTRIC CONVERTERS; MICROWAVE ACOUSTICS; MICROWAVES; MONOLITHIC INTEGRATED CIRCUITS; OSCILLATORS (ELECTRONIC); RESONATORS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR MATERIALS; SILICON; THICK FILMS; THIN FILM DEVICES; THIN FILMS;

FILM BULK ACOUSTIC RESONATORS; HIGH-RESISTIVITY SILICONS; HYBRID INTEGRATION; MONOLITHICALLY INTEGRATED; MULTI-CHIP MODULE; OSCILLATOR; PASSIVE ELEMENTS; TFBAR;

MICROWAVE OSCILLATORS;

EID: 57349176995     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2008.4632964     Document Type: Conference Paper

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