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Volumn , Issue , 2005, Pages 185-188

Noise reduction in LNAs using a conductive path to ground technique in SiGe technology

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; BICMOS TECHNOLOGY; CROSSTALK; NOISE ABATEMENT; SILICON ON INSULATOR TECHNOLOGY; TRANSISTORS;

EID: 34250695421     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ASSCC.2005.251696     Document Type: Conference Paper
Times cited : (3)

References (10)
  • 1
    • 0033322053 scopus 로고    scopus 로고
    • Noise Figure and Impedance Matching in RF Cascode Amplifiers
    • November
    • G. Girlando and Palmisano, "Noise Figure and Impedance Matching in RF Cascode Amplifiers," IEEE Transactions On Circuits and Systems II, Vol. 46, pp. 1388-1396, November 1999.
    • (1999) IEEE Transactions On Circuits and Systems II , vol.46 , pp. 1388-1396
    • Girlando, G.1    Palmisano2
  • 4
    • 34250706357 scopus 로고    scopus 로고
    • Maxim Product Data Sheet, 2.4 GHz SiGe, High IP3 Low-Noise Amplifier, 2003.
    • Maxim Product Data Sheet, 2.4 GHz SiGe, High IP3 Low-Noise Amplifier, 2003.
  • 5
    • 4444372442 scopus 로고    scopus 로고
    • Low-Noise Amplifier Comparison at 2 GHz in 0.25-μm and 0.18 μm RF-CMOS and SiGe BiCMOS
    • B. Floyd, D. Ozis, "Low-Noise Amplifier Comparison at 2 GHz in 0.25-μm and 0.18 μm RF-CMOS and SiGe BiCMOS," IEEE, Radio Frequency Circuits Symposium, pp 185-188, 2004.
    • (2004) IEEE, Radio Frequency Circuits Symposium , pp. 185-188
    • Floyd, B.1    Ozis, D.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.