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Typical conditions for obtaining STM images were Vsample =-20 mV and Itunnel =0.2 nA. The (CH3 S) 2 vapor was exposed to the clean Cu(111) surface at a temperature below 50 K. CH3 S molecules were produced by the S-S bond dissociation reaction of isolated (CH3 S) 2 molecules, induced by the injection of tunneling electrons from the STM tip. During the reaction and the manipulation, the substrate was kept at 4.7 K.
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Typical conditions for obtaining STM images were Vsample =-20 mV and Itunnel =0.2 nA. The (CH3 S) 2 vapor was exposed to the clean Cu(111) surface at a temperature below 50 K. CH3 S molecules were produced by the S-S bond dissociation reaction of isolated (CH3 S) 2 molecules, induced by the injection of tunneling electrons from the STM tip. During the reaction and the manipulation, the substrate was kept at 4.7 K.
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Based on this assumption, we estimate that " I " is 2 nA, when " d " is 8 Å (i.e., R is 0.1 GΩ), and a bias voltage (V) of -0.2 V is applied to an STM tip to induce the attractive hopping. Moreover, based on the tunneling current characteristic of STM, the value of " I " can be estimated as 0.2 nA, when d=9 Å and V=-0.2 V. Furthermore, " I " should be 0.02 nA, when d=10 Å and V=-0.2 V. Therefore, the tip-surface distance (dtip-surf) is given by " dtip-surf =8-log (I/2) =8+log2-logI " for attractive hopping.
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Based on this assumption, we estimate that " I " is 2 nA, when " d " is 8 Å (i.e., R is 0.1 GΩ), and a bias voltage (V) of -0.2 V is applied to an STM tip to induce the attractive hopping. Moreover, based on the tunneling current characteristic of STM, the value of " I " can be estimated as 0.2 nA, when d=9 Å and V=-0.2 V. Furthermore, " I " should be 0.02 nA, when d=10 Å and V=-0.2 V. Therefore, the tip-surface distance (dtip-surf) is given by " dtip-surf =8-log (I/2) =8+log2-logI " for attractive hopping.
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