Electron-microscopic investigation of a SiC/Si(111) structure obtained by solid phase epitaxy

Technical Physics Letters

Volumn 34, Issue 11, 2008, Pages 992-994

  Sorokin, L M ^a   Veselov, N V ^b   Shcheglov, M P ^b   Kalmykov, A E ^b   Sitnikova, A A ^b   Feoktistov, N A ^b   Osipov, A V ^b   Kukushkin, S A ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b INSTITUTE OF PROBLEMS OF MECHANICAL ENGINEERING   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 57049138351     PISSN: 10637850     EISSN: None     Source Type: Journal    
DOI: 10.1134/S1063785008110278     Document Type: Article

References (8)

1. O. Kordina 1995 J. Cryst. Growth 154 303
2. A. Wakahara 2002 J. Cryst. Growth 236 21
3. F. M. Morales et al., Strain Relaxion and Void Reduction in SiC on Si by Ge Predeposition, in IOP Conf. Proceedings of the Royal Microscopic Society Conference (Oxford University, 11-14 April, 2003).
4. K. Zekentes 1995 J. Cryst. Growth 157 392
5. F. M. Morales et al., Beta to Alpha Transiton and Defects of SiC on Si Grown by CVD. In IOP Conf. Proceedings of the Royal Microscopic Society Conference (Oxford University, 11-14 April, 2003).
6. A. J. Stackl 1993 Appl. Phys. Lett. 63 3347
7. S. A. Kukushkin, A. V. Osipov, and N. A. Feoktistov, RF Patent Application no. 2008102398 (22.01.2008).
8. S. A. Kukushkin A. V. Osipov 2008 Fiz. Tverd. Tela (St. Petersburg) 50 1188 [Phys. Solid State 50, 1238 (2008)]