|
Volumn 69, Issue 12, 2008, Pages 2978-2981
|
Near EF electronic structure of heavily boron-doped superconducting diamond
|
Author keywords
C. Photoelectron spectroscopy; D. Electronic structure; D. Fermi surface; D. Superconductivity
|
Indexed keywords
BORON;
CARRIER CONCENTRATION;
CRITICAL CURRENT DENSITY (SUPERCONDUCTIVITY);
DIAMONDS;
ELECTRIC CONDUCTIVITY;
ELECTRONIC PROPERTIES;
ELECTRONIC STRUCTURE;
EMISSION SPECTROSCOPY;
FERMI SURFACE;
FERMIONS;
PENETRATION DEPTH (SUPERCONDUCTIVITY);
PHOTOELECTRICITY;
PHOTOELECTRON SPECTROSCOPY;
SUPERCONDUCTIVITY;
SURFACE STRUCTURE;
X RAY PHOTOELECTRON SPECTROSCOPY;
BRILLOUIN ZONES;
C. PHOTOELECTRON SPECTROSCOPY;
CONDUCTING PROPERTIES;
D. ELECTRONIC STRUCTURE;
D. FERMI SURFACE;
D. SUPERCONDUCTIVITY;
ENERGY RESOLUTIONS;
MOMENTUM SPACES;
PHOTOEMISSION SPECTROSCOPIES;
SPECTROSCOPIC EVIDENCES;
DIAMOND FILMS;
|
EID: 57049116159
PISSN: 00223697
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jpcs.2008.06.006 Document Type: Article |
Times cited : (9)
|
References (16)
|