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Volumn 69, Issue 12, 2008, Pages 2978-2981

Near EF electronic structure of heavily boron-doped superconducting diamond

Author keywords

C. Photoelectron spectroscopy; D. Electronic structure; D. Fermi surface; D. Superconductivity

Indexed keywords

BORON; CARRIER CONCENTRATION; CRITICAL CURRENT DENSITY (SUPERCONDUCTIVITY); DIAMONDS; ELECTRIC CONDUCTIVITY; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; EMISSION SPECTROSCOPY; FERMI SURFACE; FERMIONS; PENETRATION DEPTH (SUPERCONDUCTIVITY); PHOTOELECTRICITY; PHOTOELECTRON SPECTROSCOPY; SUPERCONDUCTIVITY; SURFACE STRUCTURE; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 57049116159     PISSN: 00223697     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jpcs.2008.06.006     Document Type: Article
Times cited : (9)

References (16)
  • 2
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    • Ekimov E.A., et al. Nature 428 (2004) 542
    • (2004) Nature , vol.428 , pp. 542
    • Ekimov, E.A.1
  • 4
    • 0004032707 scopus 로고
    • Taylar & Francis, London (p. 145, Chapter 5)
    • Mott N. Metal-Insulator Transitions (1990), Taylar & Francis, London (p. 145, Chapter 5)
    • (1990) Metal-Insulator Transitions
    • Mott, N.1
  • 10
    • 28444462946 scopus 로고    scopus 로고
    • Yokoya T., et al. Nature 438 (2005) 647
    • (2005) Nature , vol.438 , pp. 647
    • Yokoya, T.1
  • 13
    • 57049107764 scopus 로고    scopus 로고
    • T. Oguchi, Private Communications.
    • T. Oguchi, Private Communications.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.