Dislocation reduction in CdTe/Si by molecular beam epitaxy through in-situ annealing

Journal of Crystal Growth

Volumn 310, Issue 24, 2008, Pages 5303-5307

  Chen, Y ^a   Farrell, S ^b   Brill, G ^a   Wijewarnasuriya, P ^a   Dhar, N ^a  

^a U S ARMY RESEARCH LABORATORY   (United States)

^b Krasnow Institute for Advanced Study   (United States)

Author keywords

A1. Dislocation; A3. Molecular beam epitaxy; B1. CdTe; B1. HgCdTe; B1. Si; B2. Etched pit density; B3. Annealing

Indexed keywords

CADMIUM ALLOYS; CADMIUM COMPOUNDS; CRYSTAL GROWTH; DEPTH PROFILING; HEAT TREATMENT; MERCURY COMPOUNDS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WIRES; SILICON; SINGLE CRYSTALS;

A1. DISLOCATION; A3. MOLECULAR BEAM EPITAXY; B1. CDTE; B1. HGCDTE; B1. SI; B2. ETCHED PIT DENSITY; B3. ANNEALING;

ANNEALING;

EID: 56949108124     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.09.023     Document Type: Article

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