High power and low resistive GalnNAs-VCSELs with buried tunnel junctions

Conference Digest - IEEE International Semiconductor Laser Conference

Volumn , Issue , 2008, Pages 53-54

  Onishi, Yutaka ^a   Saga, Nobuhiro ^a   Koyama, Kenji ^a   Doi, Hideyuki ^a   Ishizuka, Takashi ^a   Yamada, Takashi ^a   Fujii, Kosuke ^a   Mori, Hiroki ^a   Hashimoto, Junichi ^a   Shimazu, Mitsuru ^a   Katsuyama, Tsukuru ^a  

^a SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; GALLIUM NITRIDE; HETEROJUNCTIONS; HIGH ENERGY LASERS; LASERS; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR LASERS; SEMICONDUCTOR MATERIALS; SURFACE EMITTING LASERS; TUNNELS;

BURIED TUNNEL JUNCTIONS; GAINNAS; GALNNAS; HIGH POWERS; LOW RESISTANCES; MAXIMUM OUTPUT POWERS;

TUNNEL JUNCTIONS;

EID: 56749179063     PISSN: 08999406     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISLC.2008.4636005     Document Type: Conference Paper

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