Bottom-up approach to innovative memory devices: I. intrinsic and environmental effects on the molecular component

Journal of Physical Chemistry C

Volumn 112, Issue 44, 2008, Pages 17081-17088

  Pino, Ilaria ^a   Sementa, Luca ^a   Causà, Mauro ^a   Barone, Vincenzo ^a,b,c,d  

^a UNIVERSITY OF NAPLES FEDERICO II   (Italy)

^b CNR   (Italy)

^c INFN SEZIONE DI PERUGIA   (Italy)

^d Localita Granatello Portici ^*  (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; CONTINUUM MECHANICS; DATA STORAGE EQUIPMENT; ELECTRONIC PROPERTIES; IONIZATION POTENTIAL; METAL REFINING; MOLECULES; POLYSTYRENES; PROBABILITY DENSITY FUNCTION; SULFUR COMPOUNDS; THEOREM PROVING; THICK FILM DEVICES;

ALUMINUM ELECTRODES; BASIS SETS; BOTTOM-UP; CCSD; COMPLEX SYSTEMS; COMPREHENSIVE STUDIES; CRYSTALLINE STRUCTURES; DFT LEVELS; ELECTRIC-FIELD; ENVIRONMENTAL EFFECTS; EXPERIMENTAL OBSERVATIONS; FUNCTIONALS; GOLD NANOPARTICLES; HOLE INJECTIONS; MACROSCOPIC BEHAVIORS; MOLECULAR COMPONENTS; OPPOSITE TRENDS; PERIODIC DFT CALCULATIONS; POLARIZABLE CONTINUUM MODELS; POLYSTYRENE FILMS; SINGLE POINTS; TAUTOMERIZATION; TRANSITION STATES; WEAK INTERACTIONS; WORKING CONDITIONS;

MODEL STRUCTURES;

EID: 56549097922     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp804274r     Document Type: Article

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