Unsymmetrical gate voltage drive for high power 1200V IGBT4 modules based on coreless transformer technology driver

2008 13th International Power Electronics and Motion Control Conference, EPE-PEMC 2008

Volumn , Issue , 2008, Pages 88-96

  Luniewski, Piotr ^a   Jansen, Uwe ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

High voltage IC's; IGBT; Power semiconductor device; Thermal design

Indexed keywords

ACTIVE FILTERS; AUTOMOBILE DRIVERS; DC GENERATORS; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); MOTION CONTROL; MOTION PLANNING; OPTICAL FILTERS; PHOTOLITHOGRAPHY; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; STEEL BEAMS AND GIRDERS;

CHIP TECHNOLOGIES; CORELESS TRANSFORMERS; DYNAMIC MODULES; GATE DRIVES; GATE VOLTAGES; HIGH POWERS; HIGH VOLTAGE IC'S; IGBT; POWER SEMICONDUCTOR DEVICE; TECHNOLOGY DRIVERS; THERMAL DESIGN; UNSYMMETRICAL;

POWER ELECTRONICS;

EID: 56449131197     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EPEPEMC.2008.4635249     Document Type: Conference Paper

References (17)

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